n n p p n n 2n3439 ? 2N3440 comset semiconductors 1/3 h h i i g g h h v v o o l l t t a a g g e e t t r r a a n n s s i i s s t t o o r r the 2n3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in to-39 metal package. they are intended for use in power amplifier, in consumer and industrial line-operated applications. these devices are particularity suited as drives in high voltage low current inverters, switching and series regulators. compliance to rohs. absolute maximum ratings symbol ratings value unit 2n3439 2N3440 v ceo collector-emitter voltage i b = 0 350 250 v v cbo collector-base voltage i e = 0 450 300 v v ebo emitter-base voltage i c = 0 7 v i c collector current 1 a i b base current 500 ma p d total power dissipation t amb = 25 1 w t case = 25 10 t j junction temperature 200 c t st g storage temperature range -65 to +200 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient 175 c/w r thj-c thermal resistance, junction to case 35 c/w b c e www.datasheet.net/ datasheet pdf - http://www..co.kr/
n n p p n n 2n3439 ? 2N3440 08/08/2012 comset semiconductors 2/3 electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = 360 v, i e = 0 2n3439 - - 20 a v cb = 250 v, i e = 0 2N3440 i ceo collector cutoff current v ce = 300 v, i b = 0 2n3439 - - 20 a v ce = 200 v, i b = 0 2N3440 - - 50 i cex collector cutoff current v ce = 450 v, v be = -1.5 v 2n3439 - - 500 a v ce = 300 v, v be = -1.5 v 2N3440 i ebo emitter cutoff current v be = 6 v, i c = 0 2n3439 - - 20 a 2N3440 v ceo collector-emitter breakdown voltage i c = 50 ma, i b = 0 2n3439 350 - - v 2N3440 250 - - h fe dc current gain i c = 2 ma, v ce = 10 v 2n3439 30 - - - i c = 20 ma, v ce = 10 v 2n3439 40 - 160 2N3440 v ce(sat) collector-emitter saturation voltage i c = 50 ma, i b = 4 ma - - 0.5 v v be(sat) base-emitter saturation voltage i c = 50 ma, i b = 4 ma - - 1.3 v f t transition frequency i c = 10 ma, v cb = 10 v f = 5 mhz 15 - - mhz c ob output capacitance v cb = 10 v, f = 1mhz - - 10 pf www.datasheet.net/ datasheet pdf - http://www..co.kr/
n n p p n n 2n3439 ? 2N3440 08/08/2012 comset semiconductors 3/3 mechanical data case to-39 revised august 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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